Preface
Chapter 1 Introduction
1.1 History of semiconductor devices and ICs
1.2 Moore''s Law--transistor scaling
1.3 Die yield and die cost
References
Chapter 2 Semiconductor material fundamentals
2.1 Atomic structures
2.1.1 Elements and element periodic table
2.1.2 Bohr''s theory--orbits
2.1.3 Distribution of electrons--valence electrons
2.1.4 Chemical bonds
2.2 Crystal structures
2.2.1 General material structures
2.2.2 Crystallography--diamond structure and zinc blende structure
2.2.3 Crystallographic notation
2.2.4 Bohr''s theory--energy level and energy band
2.3 Energy band theory
2.3.1 Insulator, semiconductor and conductor
2.3.2 Electrons and holes
2.3.3 Generation and recombination
2.4 Doping of semiconductors
2.4.1 Doping elements
2.4.2 Doping: n-type
2.4.3 Doping: p-type
2.4.4 Counter doping
2.5 Carriers distribution
2.5.1 Fermi function and Fermi level
2.5.2 Density of states
2.5.3 Electron and hole concentrations
2.6 Carrier drift and diffusion
2.6.1 Carrier scattering
2.6.2 Carrier drift--drift currents and mobility
2.6.3 Electric field and energy band bending
2.6.4 Carrier diffusion--diffusion currents and Einstein relation
References
Chapter 3 Semiconductor device fundamentals
3.1 PN junction
3.1.1 Formation of depletion region
3.1.2 Built-in potential
3.1.3 Distribution of electric field and electric potential
3.1.4 Effect of applied voltage
3.1.5 Depletion capacitance
3.2 Metal-semiconductor contacts and MOS capacitors
3.2.1 Schottky diode and Ohmic contact
3.2.2 MOS capacitance and measurement
3.2.3 MOS energy band diagram
3.2.4 Capacitance--voltage characteristics
3.3 MOSFETs
3.3.1 Current--voltage characteristics
3.3.2 Types and circuit symbols of MOSFETs
3.3.3 Switch model of MOSFETs
3.4 Bipolar junction transistors
3.4.1 PN junction--a brief review
3.4.2 BJT structure and circuit symbols
3.4.3 NPN BJT operation--a qualitative analysis
3.4.4 NPN BJT operation--a quantitative analysis
References
Chapter 4 Semiconductor fabrication fundamentals
4.1 IC fabrication techniques
4.1.1 Thin film formation
4.1.2 Photolithography and etching
4.1.3 Doping
4.2 IC resistor and diode process
4.2.1 IC resistor--masks and process steps
4.2.2 Design rules
4.2.3 Sheet resistance
4.2.4 Layout design of an IC resistor
4.2.5 Diode--masks and process steps
4.3 MOSFET process
4.3.1 NMOSFET process flow and layout
4.3.2 Local oxidation of silicon
4.3.3 CMOS n well process flow
4.4 BJT process
4.4.1 BJT process steps
4.4.2 Layout of an NPN BJT IC
References
Chapter 5 Integrated circuits--concepts and design
5.1 NMOS digital circuits
5.1.1 NMOS digital circuits analysis--logic and calculation
5.1.2 MOSIS design rules for NMOS ICs
5.1.3 Layouts of NMOS logic families
5.2 CMOS digital circuits
5.2.1 CMOS digital circuits analysis
5.2.2 MOSIS design rules for CMOS ICs
5.2.3 MOS transistors in seriesparallel connection
5.2.4 CMOS inverter, NOR gates and NAND gates
5.2.5 Ratioed logic and combinational equivalent circuit
5.2.6 Dynamic circuits
5.3 MOS analog circuits
5.3.1 MOSFET active resistors and potential dividers
5.3.2 MOSFET common-source stages
5.3.3 CMOS push-pull amplifiers
5.3.4 MOSFET current mirrors
5.3.5 MOSFET differential amplifiers
References
Appendix I Properties of semiconductor materials
Appendix II Symbols and constant
Appendix III L-Edit Quick Guide
購物車/收銀台(
0
) | 在線留言板
| 付款方式
| 運費計算
| 聯絡我們
| 幫助中心 |
加入書簽
HOME
新書上架
