自1958年集成电路诞生以来，硅基集成芯片制造技术迅速发展，现今已经进入亚5nm时代。硅基芯片制造技术可以概括为一系列微细加工硅片技术，这些愈益精密的微细加工技术持续创新与升级，源于20世纪初以来现代物理等物质科学知识的长期积累。充分了解各种微细加工技术背后的科学原理，是理解和掌握集成芯片制造工艺技术的基础。
全书共20章。前8章概述硅基集成芯片从小规模到极大规模集成的创新演进路径，分析集成芯片制造技术快速升级换代的独特规律，研判器件微小型化技术与摩尔规律的内在联系，并对半导体物理和晶体管原理基础理论知识作概要讨论。后12章分别阐述热氧化、硅单晶与外延生长及SOI晶片、精密图形光刻、扩散掺杂、离子注入与快速退火、PVD与CVD及ALD薄膜淀积、高密度等离子体刻蚀、金属硅化物自对准接触和多层金属互连等多种集成芯片微细加工关键技术，着力分析讨论各种微细加工技术的物理、化学基础原理与规律，其间对制造工艺中广泛应用的真空技术与等离子体技术作概要介绍。本书特别关注进入21世纪以来正在发展的集成芯片制造技术的新结构、新材料、新工艺和新趋势，介绍包括高密度超微立体晶体管和纳米CMOS等集成器件的典型结构与制造工艺。
Abstract
This book focuses on the Si micro-fabrication technology. Since the invention of integrated circuits (IC) in 1958， the Si micro-fabrication technology has been developing rapidly thanks to the advances in modern physics and other fundamental sciences from the beginning of the 20th century. Fully understanding the scientific principles underlying the various micro-fabrication technologies is the basis for studying and mastering the Si IC chip process technology.
This book consists of 20 chapters. The first 8 chapters outline the evolution and innovation of the CMOS and bipolar IC process technology over the past six decades， analyze the unique law of Si IC micro-fabrication technology evolution， discuss the relationship between the scaling-down principle and the Moore’s Law， and review the basic theories of semiconductor physics and transistors. The following 12 chapters elaborate on such key process technologies of Si IC chips as thermal oxidation， Si epitaxial growth and SOI material， lithography， dopant diffusion， ion implant and RTA， PVD/CVD/ALD thin films， high density plasma etching， salicide contact and multi-level interconnection. The physical and chemical principles underlying the micro-fabrication technology are analyzed and discussed for better understanding. Besides， more attention is paid to the fabrication technology of nano-CMOS chips with new structures and materials.
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